Waveguiding in epitaxial 3C-silicon carbide on silicon
- 17 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (17) , 1438-1439
- https://doi.org/10.1049/el:19950997
Abstract
Waveguiding in 3C-silicon carbide has been observed following ion implantation of oxygen. The losses have been measured at different stages of the anneal process.Keywords
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