Linear electro-optic effect in cubic silicon carbide
- 14 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (16) , 1938-1939
- https://doi.org/10.1063/1.106165
Abstract
We report the first observation of the electro‐optic effect of cubic silicon carbide (β‐SiC) grown by a low‐pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electro‐optic coefficient r41 in β‐SiC is determined to be 2.7±0.5×10−12 m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 μm. Also a half‐wave voltage of 6.4 kV for β‐SiC is obtained. Because of this favorable value of electro‐optic coefficient we believe that silicon carbide may be a promising candidate in electro‐optic applications for high optical intensity in the visible region.Keywords
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