Observation of deep levels in cubic silicon carbide
- 11 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (19) , 1384-1385
- https://doi.org/10.1063/1.97864
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Behavior of inversion layers in 3C silicon carbideApplied Physics Letters, 1986
- Schottky barrier diodes on 3C-SiCApplied Physics Letters, 1985
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983