Fabrication of small laterally patterned multiple quantum wells
- 10 November 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19) , 1284-1286
- https://doi.org/10.1063/1.97387
Abstract
A technique of high voltage electron beam lithography and BCl3/Ar reactive ion etching for laterally patterning GaAs/Al0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.Keywords
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