Low degradation and fast annealing effects of amorphous silicon multilayer processed through alternate hydrogen dilution
- 15 October 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (8) , 4881-4888
- https://doi.org/10.1063/1.1311308
Abstract
Alternately hydrogen diluted a-Si:H multilayers are shown to be a promising concept for the fabrication of stable a-Si:H solar cells or other a-Si:H based devices. The alternately hydrogen diluted amorphous silicon multilayers were obtained by toggling both the dilution ratio and the total flow rate of the gases under continuous UV light irradiation into the reaction chamber of a photochemical vapor deposition system. The films were characterized by Fourier transformed infrared spectroscopy, spectroscopic ellipsometry, cross-sectional transmission electron microscopy, and atomic force microscopy. We applied these multilayers as the active layer of type thin film solar cells. The multilayer solar cells are compared to solar cells incorporating a-Si:H made from pure gas and to solar cells incorporating a-Si:H made at a constant hydrogen dilution ratio containing nearly the same hydrogen amount as the multilayer. We report on the light-soaking and annealing behavior of the solar cells. The multilayer solar cell has an exceptionally high recovery rate at low temperatures, which makes the solar cell degradation behavior highly sensitive to the cell temperature during degradation. Following the relation, where and τ are the diffusion coefficient for hydrogen and time constant for annealing, respectively, the layered structure in the multilayer possibly elevates which accounts for rapid stabilization and annealing.
This publication has 18 references indexed in Scilit:
- Enhanced vertical photo-sensitivity in μc-Si:H/a-Si:H superlatticesJournal of Non-Crystalline Solids, 2000
- Midgap density of states in hydrogenated polymorphous siliconJournal of Applied Physics, 1999
- Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinityApplied Physics Letters, 1999
- Effects of embedded crystallites in amorphous silicon on light-induced defect creationApplied Physics Letters, 1999
- Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopyApplied Physics Letters, 1998
- Effect of hydrogen dilution on the structure of amorphous silicon alloysApplied Physics Letters, 1997
- The reversal of light-induced degradation in amorphous silicon solar cells by an electric fieldApplied Physics Letters, 1997
- Preparation of High-Quality Undoped Microcrystalline Silicon with High Deposition Rate Using Mercury-Sensitized Photochemical Vapor Deposition MethodJapanese Journal of Applied Physics, 1996
- Hydrogen passivation of visible p-i-n type thin-film light-emitting diodesApplied Physics Letters, 1996
- A Carrier Lifetime Model for the Optical Degradation of Amorphous Silicon Solar CellsMRS Proceedings, 1985