Titanium-hydrogen defects in silicon
- 15 October 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (16) , R11038-R11041
- https://doi.org/10.1103/physrevb.54.r11038
Abstract
Several titanium-hydrogen (TiH) complexes are generated in crystalline Si by wet chemical etching or a remote hydrogen plasma treatment. We identify two electrically active ( eV, eV) and one electrically inactive TiH complex. The passive TiH complex dissociates at temperatures above 570 K, leading to an increase in the interstitial Ti concentration.
Keywords
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