Titanium-related deep levels in silicon: A reexamination
- 15 December 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (12) , 5862-5867
- https://doi.org/10.1063/1.343608
Abstract
Deep-level transient spectroscopy is used to determine the energetic positions of the deep levels induced by titanium in the silicon band gap. The experimental results confirm that titanium is an amphoteric center with an acceptor level at Ec–0.09 eV and two donor levels at Ec−0.30 eV and Ev+0.26 eV. The properties of the first donor level are analyzed in more detail, and an explanation is proposed for the absence of the Poole–Frenkel effect at this level.This publication has 16 references indexed in Scilit:
- Titanium diffusion in siliconApplied Physics Letters, 1988
- Dependence of the energy levels related to titanium in silicon on electric fieldChinese Physics Letters, 1986
- Deep-Levels Associated with Implanted Titanium in SiliconMRS Proceedings, 1986
- Complete electrical characterization of recombination properties of titanium in siliconJournal of Applied Physics, 1984
- A study of grown-in impurities in silicon by deep-level transient spectroscopySolid-State Electronics, 1983
- Thermal emission rates and capture cross-section of majority carriers at titanium levels in siliconSolid-State Electronics, 1983
- Transition metals in siliconApplied Physics A, 1983
- The Effects of Titanium Impurities in N+/P Silicon Solar CellsJournal of the Electrochemical Society, 1980
- Titanium in silicon as a deep level impuritySolid-State Electronics, 1979
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972