Dependence of the energy levels related to titanium in silicon on electric field
- 1 October 1986
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 3 (10) , 473-476
- https://doi.org/10.1088/0256-307x/3/10/011
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Complete electrical characterization of recombination properties of titanium in siliconJournal of Applied Physics, 1984
- Thermal emission rates and capture cross-section of majority carriers at titanium levels in siliconSolid-State Electronics, 1983
- Effect of titanium, copper and iron on silicon solar cellsSolid-State Electronics, 1980
- Titanium in silicon as a deep level impuritySolid-State Electronics, 1979
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977
- The Three-Dimensional Poole-Frenkel EffectJournal of Applied Physics, 1968
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938