Titanium in silicon as a deep level impurity
- 1 September 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (9) , 801-808
- https://doi.org/10.1016/0038-1101(79)90130-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Crystal growth considerations in the use of “solar grade” siliconJournal of Crystal Growth, 1977
- Lifetime-controlling recombination centers in platinum-diffused siliconJournal of Applied Physics, 1976
- Experiments on the origin of process−induced recombination centers in siliconJournal of Applied Physics, 1975
- Analysis and measurement of carrier lifetimes in the various operating modes of power devicesSolid-State Electronics, 1974
- Determination of deep trap levels in silicon using ion-implantation and CV-measurementsApplied Physics A, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Quenched-in centers in silicon p+n junctionsSolid-State Electronics, 1974
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972