Determination of deep energy levels in Si by MOS techniques

1 October 1972

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 21 (7) , 329-331
https://doi.org/10.1063/1.1654399

Abstract

Ions are implanted into a Si–SiO₂ interface. If the distribution is several hundred angstroms wide, the ions create interface states at energies corresponding to their bulk levels. With most elements investigated, agreement with previous data is good. Energy levels of the elements Se, Be, Cd, Sn, Ti, Pb, S, C, Ba, Ta, V, Mn, Cs, and Ge were determined by the MOS technique.

Keywords

ENERGY LEVELS

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