Titanium diffusion in silicon
- 3 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (14) , 1269-1271
- https://doi.org/10.1063/1.100446
Abstract
Titanium diffusion profiles in silicon were determined in the 950–1200 °C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface. Thus diffusivity values in the range 5×10−10–10−8 cm2 s−1 are obtained, and are about two orders of magnitude higher than previously reported.Keywords
This publication has 3 references indexed in Scilit:
- Complete electrical characterization of recombination properties of titanium in siliconJournal of Applied Physics, 1984
- Transition metals in siliconApplied Physics A, 1983
- Titanium in silicon as a deep level impuritySolid-State Electronics, 1979