Equivalent circuit models in semiconductor transport for thermal, optical, auger-impact, and tunnelling recombination–generation–trapping processes

This publication has 18 references indexed in Scilit:

• The equivalent circuit model in solid-state electronics—III
  Solid-State Electronics, 1970
• Recombination-Generation and Optical Properties of Gold Acceptor in Silicon
  Physical Review B, 1970
• Application of the distributed equilibrium equivalent circuit model to semiconductor junctions
  IEEE Transactions on Electron Devices, 1969
• Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysis
  Solid-State Electronics, 1969
• Tunneling Phenomena in Solids
  Published by Springer Nature ,1969
• The equivalent circuit model in solid-state electronics—Part II: The multiple energy level impurity centers
  Proceedings of the IEEE, 1967
• The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers
  Proceedings of the IEEE, 1967
• Problems related to p-n junctions in silicon
  Solid-State Electronics, 1961
• Cascade Capture of Electrons in Solids
  Physical Review B, 1960
• Hot Electrons in Germanium and Ohm's Law
  Bell System Technical Journal, 1951