Properties of tungsten point contacts formed with chemical vapour deposition
- 1 February 1996
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 218 (1-4) , 101-104
- https://doi.org/10.1016/0921-4526(95)00569-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Formation of lithographic metallic hetero-contactsPhysica B: Condensed Matter, 1996
- Step coverage of tungsten films deposited by germane reduction of WF6Applied Surface Science, 1993
- Thin films in the integrated circuit industry: requirements and deposition methodsThin Solid Films, 1993
- Ballistic electron transport and two-level resistance fluctuations in noble-metal nanobridgesPhysical Review B, 1992
- Fabrication of metallic nanoconstrictionsMicroelectronic Engineering, 1990
- Fabrication of thin-film metal nanobridgesApplied Physics Letters, 1989
- Defect Interactions and Noise in Metallic NanoconstrictionsPhysical Review Letters, 1988
- Selective Low Pressure Chemical Vapor Deposition of TungstenJournal of the Electrochemical Society, 1984
- Direct measurement of the electron-phonon interaction in Pd, Mo and W by point-contact spectroscopySolid State Communications, 1981
- Regimes in the behavior of superconducting microbridgesJournal of Low Temperature Physics, 1977