Anisotropic strain relaxation in buried CoSi2 layers formed by mesotaxy
- 15 January 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (2) , 787-791
- https://doi.org/10.1063/1.345732
Abstract
The lattice mismatch in and out of the orientation direction was measured in layers of CoSi2 grown by high dose implantation and annealing. A comparison of (111), (100), and (110) orientations showed that the lateral mismatches were similar but the perpendicular mismatch increased monotonically through the series. The differences in the degree of relaxation of the three orientations provide a possible explanation for the observed anisotropy in the electrical properties.This publication has 13 references indexed in Scilit:
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