Transport coefficients of InAs epilayers

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Abstract
Heteroepitaxially grown single‐crystal InAs layers exhibit anomalies in the magnetic field dependence of their Hall coefficients, their magnetoresistance, and the temperature dependence of their electron mobilities. These are attributed to a degenerate surface accumulation of electrons and are interpreted in terms of a two‐layer model, one with bulklike and the other with surfacelike charge carrier transport coefficients.