Preparation and properties of epitaxial InAs
- 31 July 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (7) , 649-655
- https://doi.org/10.1016/0038-1101(67)90095-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
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- Growth mechanism and defect structures in epitaxial siliconPhilosophical Magazine, 1962
- Gas Permeation Study and Imperfection Detection of Thermally Grown and Deposited Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1962
- Preparation of Epitaxial GaAs and GaP Films by Vapor Phase ReactionJournal of the Electrochemical Society, 1962
- Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase ReactionJournal of the Electrochemical Society, 1959
- Electrical Properties of-Type InAsPhysical Review B, 1956