Growth mechanism and defect structures in epitaxial silicon
- 1 November 1962
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 7 (83) , 1847-1860
- https://doi.org/10.1080/14786436208213850
Abstract
Thin layers of silicon have been grown epitaxially on silicon substrates by hydrogen reduction of trichlorosilane. The initial mode of growth of these films has been studied using electron microscopic methods to examine substrates and surfaces exposed to slow growth rate conditions for short periods. These observations have been supplemented by glancing angle electron diffraction studies of the same surfaces, and have shown that growth commences by a three-dimensional nucleation process, probably as a result of slight residual surface contamination. Chemical etching of grown surfaces has revealed that defect structures are present in the epitaxial layers. The nature and origin of these defects have been investigated by transmission electron microscopy and electron diffraction.Keywords
This publication has 14 references indexed in Scilit:
- X-Ray Observations of Partial Dislocations in Epitaxial Silicon FilmsJournal of Applied Physics, 1962
- Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1962
- Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl[sub 3] onto Silicon SubstratesJournal of the Electrochemical Society, 1962
- Study of background structure in platinum/carbon shadowing depositsBritish Journal of Applied Physics, 1960
- The preparation of smooth single crystal surfaces of silver by an evaporation techniquePhilosophical Magazine, 1959
- Direct observations of defects in quenched goldPhilosophical Magazine, 1959
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958
- Oriented chemical growth on single crystals of zinc and cadmiumProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1952
- Oriented chemical overgrowths and surface topographyProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1952
- The Structure of Thin Layers of Zinc Oxide Grown on a Zinc Single CrystalProceedings of the Physical Society. Section A, 1951