Analysis of buried layers from high dose oxygen ion implantation
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 148-150
- https://doi.org/10.1016/0168-583x(87)90814-7
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Silicon on insulator by ion implantation: A dream or a reality?Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Refractive index profiles and range distributions of silicon implanted with high-energy nitrogenJournal of Applied Physics, 1979