Interstitial interactions: Aluminum-boron, aluminum-gallium, and boron-gallium pull effect
- 1 April 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (7) , 2495-2500
- https://doi.org/10.1063/1.337923
Abstract
Quantum chemical calculations on a model silicon lattice where combinations of interstitial p‐type dopant species (aluminum‐boron, aluminum‐gallium, and boron‐gallium) interact predict that all combinations will exhibit a pull effect. Diffusion of either member of a set will be retarded; the boron‐gallium pair will exhibit the greatest attraction between p‐type dopant pairs. There predictions are confirmed experimentally. Moreover, unanticipated enhanced electrical activity, greatly exceeding the additive, also is observed.This publication has 7 references indexed in Scilit:
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