Silicon self-interstitial supersaturation during phosphorus diffusion
- 15 November 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (10) , 937-939
- https://doi.org/10.1063/1.94187
Abstract
The effect of phosphorus introduction and diffusion on the diffusivities of boron, arsenic, and antimony in silicon was studied using arsenic and antimony buried layers in a boron-doped silicon substrate. It was found that the diffusivity of boron and arsenic was enhanced, while that of antimony was retarded directly under the silicon surface exposed to phosphorus. Since antimony diffuses primarily via a vacancy mechanism while the other two elements via a combination of vacancy and interstitialcy mechanisms, these results suggest that phosphorus predeposition enhances the silicon self-interstitial concentration and reduces the concentration of vacancies.Keywords
This publication has 12 references indexed in Scilit:
- Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kineticsJournal of Applied Physics, 1982
- Oxidation‐Induced Point Defects in SiliconJournal of the Electrochemical Society, 1982
- The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1981
- Retardation of Sb Diffusion in Si during Thermal OxidationJapanese Journal of Applied Physics, 1981
- Interstitial supersaturation near phosphorus-diffused emitter zones in siliconApplied Physics Letters, 1979
- Models for computer simulation of complete IC fabrication processIEEE Journal of Solid-State Circuits, 1979
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip EffectJournal of the Electrochemical Society, 1977
- Excess vacancy generation by E-center dissociation in the case of phosphorus diffusion in siliconJournal of Applied Physics, 1977
- Excess vacancy generation mechanism at phosphorus diffusion into siliconJournal of Applied Physics, 1974
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965