Interstitial supersaturation near phosphorus-diffused emitter zones in silicon
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8) , 530-532
- https://doi.org/10.1063/1.90853
Abstract
Bipolar transistors with consecutively diffused boron base and phosphorus emitter showing the ’’emitter‐push effect’’ have been investigated by transmission electron microscopy. The analysis of isolated dislocation helices in the emitter and base regions indicates the presence of a self‐interstitial supersaturation in front of the phosphorus‐diffused zone. This result refutes the widely accepted explanation of the ’’emitter‐push effect’’ in terms of a phosphorus‐induced vacancy supersaturation.Keywords
This publication has 17 references indexed in Scilit:
- Dynamic studies of defect mobility using high voltage electron microscopyJournal of Nuclear Materials, 1978
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip EffectJournal of the Electrochemical Society, 1977
- The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into SiliconJapanese Journal of Applied Physics, 1977
- Interactions between sequential dopant diffusions in silicon-a reviewJournal of Physics D: Applied Physics, 1977
- Oxidation-rate dependence of phosphorus diffusivity in siliconPhilosophical Magazine, 1976
- A simple method for the analysis of dislocation loops by means of the inside-outside contrast on transmission electron micrographsPhysica Status Solidi (a), 1975
- A new preparation method for large area electron-transparent silicon samplesJournal of Physics E: Scientific Instruments, 1975
- On phosphorus diffusion in silicon under oxidizing atmospheresSolid-State Electronics, 1973
- Neutron irradiation damage in molybdenumPhilosophical Magazine, 1971
- Effects of High Phosphorus Concentration on Diffusion into SiliconJournal of the Electrochemical Society, 1968