Ionizing Radiation Hardness of GaAs Technologies
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1663-1668
- https://doi.org/10.1109/tns.1987.4337533
Abstract
The radiation response of several GaAs technologies to ionizing radiation has been investigated. Self-aligned gate (SAG) E/D GaAs Metal Semiconductor FET (MESFET), SAG AlGaAs/GaAs Modulation Doped FET (MODFET), and complementary-AlGaAs/GaAs Heterostructure Insulated Gate FET (C-HIGFET) devices and circuits all demonstrated minimal sensitivity to total dose effects to 250 Mrad(GaAs). The heterostructure based technologies showed superior tolerance to high dose rate exposures, with upset levels exceeding 1×1010 rads(GaAs)/s.Keywords
This publication has 3 references indexed in Scilit:
- Transient Radiation Effects in AlGaAs/GaAs MODFETsIEEE Transactions on Nuclear Science, 1987
- The Effects of Radiation on Electronic SystemsPublished by Springer Nature ,1986
- Radiation Hardness of 256-Bit GaAs C-JFET RamIEEE Transactions on Nuclear Science, 1985