Radiation Hardness of 256-Bit GaAs C-JFET Ram
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4061-4064
- https://doi.org/10.1109/tns.1985.4334069
Abstract
A low-power complementary RAM using GaAs enhancement N- and P-channel junction field effect transistors has been developed at MDMC. The power dissipation per memory cell is 1 μW. The RAM's logic upset level for pulsed ionizing radiation is in the range of 1010 to 3 × 1011 rad(GaAs)/s. A total gamma dose of 1.5 × 108 rad(GaAs) does not affect the RAM operation. Previous tests were performed with RAMs using four N-channel JFETs and resistive loads in the memory cell.Keywords
This publication has 2 references indexed in Scilit:
- Channel and Substrate Currents in GaAs FETS Due to Ionizing RadiationIEEE Transactions on Nuclear Science, 1983
- Logic Upset Level of GaAs SRAMs for Pulsed Ionizing RadiationIEEE Transactions on Nuclear Science, 1983