Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures
- 1 July 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1) , 54-56
- https://doi.org/10.1063/1.94984
Abstract
Femtosecond intraband relaxation dynamics of hot carriers in highly excited states of GaAs, AlGaAs, and AlGaAs/GaAs multiple quantum well (MQW) structures are studied at room temperature using the equal-pulse correlation technique. Initial carrier lifetimes of 35, 60, and 50 fs are measured for GaAs, Al0.32Ga0.68As, and MQW structures for excitation with 2.02-eV photons at low carrier densities, and are in reasonable agreement with calculated scattering rates. The carrier-density dependence of these lifetimes is measured for densities in the range 1.5×1017–5×1019 cm−3.Keywords
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