Zone-center optical phonons in wurtzite GaN and AlN
- 1 November 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (9) , 4693-4695
- https://doi.org/10.1063/1.366212
Abstract
Phonons at the zone-center of wurtzite semiconductorsGaN and AlN are studied theoretically within a rigid-ion model. The anisotropies of the zone-center optical phonons induced by the macroscopic electric field are investigated.This publication has 29 references indexed in Scilit:
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- Characteristics of InGaN Multiquantum-Well-Structure Laser DiodesMRS Proceedings, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitridePhysical Review B, 1993
- Vibrational Spectroscopy of Aluminum NitrideJournal of the American Ceramic Society, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- First-principles total-energy calculation of gallium nitridePhysical Review B, 1992
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991
- Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductorsPhysical Review B, 1983
- Lattice Dynamics of Wurtzite: CdSPhysical Review B, 1967