Determination of Γ electron and light hole effective masses in AlxGa1−xAs on the basis of energy gaps, band-gap offsets, and energy levels in AlxGa1−xAs/GaAs quantum wells
- 11 June 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (24) , 2425-2427
- https://doi.org/10.1063/1.102898
Abstract
Experimental data of energy gaps, band offsets, and energy levels in AlxGa1−xAs/GaAs quantum wells are utilized for the determination of Γ electron and light hole effective masses in AlxGa1−xAs compounds on the basis of the author’s relations between these quantities. The temperature dependences of electron and light hole effective masses in GaAs are also obtained.Keywords
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