Increasing the effective height of a Schottky barrier using low-energy ion implantation
- 1 July 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (1) , 75-77
- https://doi.org/10.1063/1.1655287
Abstract
The presence of a shallow n‐type surface layer on a p‐type substrate is shown to increase the effective height of a Schottky barrier to p‐type material. The effective barrier height of Ni–Si diodes has been increased by an amount in the range 0–0.25 eV using surface layers formed by low‐energy antimony implantation.Keywords
This publication has 3 references indexed in Scilit:
- 126.1-nm molecular argon laserApplied Physics Letters, 1974
- Reducing the effective height of a Schottky barrier using low-energy ion implantationApplied Physics Letters, 1974
- Photodetection by barrier modulation in Cu-diffused Au/CdS junctionsApplied Physics Letters, 1973