Photodetection by barrier modulation in Cu-diffused Au/CdS junctions
- 1 December 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (11) , 617-619
- https://doi.org/10.1063/1.1654768
Abstract
Modulation of essentially thermionic forward current by light‐induced lowering of an electrostatic barrier leads to steady‐state electron per photon gain of order 106 in narrow Cu‐compensated Au/CdS junctions. The light dependence of the barrier, whose peak lies within the semiconductor, is measured directly by internal photoemission. A model of the junction is presented and the limiting threshold and gain of this type of device is estimated.Keywords
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