The interaction of oxygen with dislocation cores in silicon
- 1 April 1993
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 67 (4) , 905-915
- https://doi.org/10.1080/01418619308213967
Abstract
The interaction of O with 90° partial dislocations in Si is examined using a cluster method with local-density-functional pseudo-potential theory. We consider several states of O at dislocation cores firstly which are normally reconstructed and secondly which contain solitonic reconstructed bonding patterns. This topic has been the subject of a number of experiments by Sumino and his collaborators, and our overall findings support his conclusions.Keywords
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