Laser-induced crystallization phenomena in GeTe-based alloys. II. Composition dependence of nucleation and growth
- 15 October 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (8) , 4918-4928
- https://doi.org/10.1063/1.359780
Abstract
The laser‐induced crystallization behavior of GeTe‐based amorphous alloys has been measured with a novel multipulse laser technique. This enables the composition dependence of the nucleation rate and crystal growth speed to be independently followed. Two types of crystallization are investigated. The first involves single‐phase crystallization of quaternary alloys based on Ge39Sb9Te52, in which the composition dependence of nucleation and growth is followed as Se, S, Sn, and Si are included. Both the nucleation rate and crystal‐growth speed vary exponentially with the composition, and a correlation is found between crystallization behavior and bond strengths. The second involves multiphase crystallization in the GeSbTe ternary system. It is shown that the observed variations in crystallization behavior primarily arise from the composition dependence of nucleation rather than crystal growth. The implications of this finding for the importance of long range diffusion during crystallization in the GeSbTe system are discussed.This publication has 15 references indexed in Scilit:
- Phase diagram of the ternary system Ge-Sb-Te: II. The subternary Ge-GeTe-Sb2Te3-SbPublished by Elsevier ,2001
- Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growthJournal of Applied Physics, 1995
- Crystallization studies of electron beam-deposited telluride filmsJournal of Materials Science: Materials in Electronics, 1992
- Metastable phase formation and structural change characteristics of vapor deposited semiconductor filmsAnnalen der Physik, 1992
- Germanium supersaturation during the crystallization of amorphous Te–Ge–Sn thin filmsJournal of Materials Research, 1991
- Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memoryJournal of Applied Physics, 1991
- Thermodynamic properties and crystallization kinetics of glass-forming undercooled liquid Au-Pb-Sb alloysJournal of Applied Physics, 1990
- Ge–Te–Sb Based Overwritable Phase Change Optical DiskJapanese Journal of Applied Physics, 1989
- Compound materials for reversible, phase-change optical data storageApplied Physics Letters, 1986
- Phase diagram of the ternary system GeSbTe. I. The subternary GeTeSb2Te3TeThermochimica Acta, 1984