Fabrication of Si/SiO2 nanocomposite thin films
- 31 December 1995
- journal article
- Published by Elsevier in Nanostructured Materials
- Vol. 6 (5-8) , 835-838
- https://doi.org/10.1016/0965-9773(95)00189-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmospherePhysical Review B, 1988
- A study of electronic states in a-SiOx and a-SiNx thin films by infrared, auger electron and X-ray photoelectron spectroscopiesJournal of Non-Crystalline Solids, 1985
- Effects of polysilane formation on the optical and electrical properties of binary Si:H alloysPhysical Review B, 1985
- Annealing characteristics of Si-rich SiO2 filmsApplied Physics Letters, 1985
- Electroluminescence studies in silicon dioxide films containing tiny silicon islandsJournal of Applied Physics, 1984
- Efficient visible photoluminescence in the binary a-Si:Hx alloy systemApplied Physics Letters, 1983