Annealing characteristics of Si-rich SiO2 films
- 1 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 38-40
- https://doi.org/10.1063/1.95842
Abstract
Silicon-rich SiO2 films of various compositions were deposited by atmospheric or plasma-enhanced chemical vapor deposition (CVD) techniques. These films were annealed at various temperatures between 700 and 1100 °C. The growth and crystallinity of the silicon clusters were monitored by transmission electron microscopy. The growth of the silicon clusters was found to be diffusion controlled with an activation energy measured to a first approximation at 1.9 eV/atom for both atmospheric and plasma-enhanced CVD films. A minimum annealing temperature of between 800 and 950 °C and a minimum amount of excess Si above SiO2 are required to form crystalline silicon particles in the films. The minimum silicon crystal diameter was measured at 2.5 nm.Keywords
This publication has 13 references indexed in Scilit:
- Charge transport and trapping phenomena in off-stoichiometric silicon dioxide filmsJournal of Applied Physics, 1983
- Silicon-rich SiO2and thermal SiO2dual dielectric for yield improvement and high capacitanceIEEE Transactions on Electron Devices, 1983
- Optical Absorption of Thin SIPOS FilmsJournal of the Electrochemical Society, 1982
- Electrically-alterable memory using a dual electron injector structureIEEE Electron Device Letters, 1980
- High current injection into SiO2 from Si rich SiO2 films and experimental applicationsJournal of Applied Physics, 1980
- An electron diffraction study of amorphous silicon oxide filmsJournal of Non-Crystalline Solids, 1979
- AES and XPS Studies of Semi‐Insulating Polycrystalline Silicon (SIPOS) LayersJournal of the Electrochemical Society, 1979
- Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atomsJournal of Applied Physics, 1978
- Semi-Insulating Polycrystalline-Silicon (SIPOS) Films Applied to MOS Integrated CircuitsJapanese Journal of Applied Physics, 1976
- Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation TechnologyJapanese Journal of Applied Physics, 1976