Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation
- 5 November 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (19) , 3161-3163
- https://doi.org/10.1063/1.1415768
Abstract
No abstract availableKeywords
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