An analytical method for determining intrinsic drain/source resistance of lightly doped drain (LDD) devices
- 31 January 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (1) , 89-96
- https://doi.org/10.1016/0038-1101(84)90097-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technologyIEEE Transactions on Electron Devices, 1982
- Experimental derivation of the source and drain resistance of MOS transistorsIEEE Transactions on Electron Devices, 1980
- Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistorIEEE Transactions on Electron Devices, 1980