Conduction-band discontinuities of InxAl1−xAs/In0.53Ga0.47As n-isotype heterojunctions
- 1 May 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (9) , 4377-4379
- https://doi.org/10.1063/1.344908
Abstract
The conduction‐band offsets ΔEc of n‐isotype InxAl1−xAs/In0.53Ga0.47As heterojunctions, with 0.47<x≤0.52, grown by molecular‐beam epitaxy, lattice matched and pseudomorphically strained on n+‐InP substrates, were determined from the capacitance‐voltage profiling technique. A more accurate ΔEc value was obtained after the correction for fixed interface charge perturbation. The ΔEc related to the band‐gap difference ΔEgs of the heterojunction are found to be ΔEc=0.70ΔEgs. The fixed interface charges are acceptorlike with a density of the order 1010/cm2.This publication has 14 references indexed in Scilit:
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