Effect of Ge Addition on Ga-Se-Te System Reversible Optical Recording Media

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Abstract
A reversible optical storage medium capable of more than 104 write/erase cycles has been realized using a Te0.8(Ga0.05Se0.95)0.2+5 wt% Ge film (∼1000 Å). For this composition, a peak temperature of an exothermic curve of 156°C and an activation energy from Kissinger's plot of 2.24 eV were obtained using a differential scanning calorimeter. In this film, a peak of GeTe crystal was identified by X-ray diffraction. To investigate changes of the film surface induced through an annealing (200°C + 100 mW/cm2Xe, ∼1 min), a high resolution SEM observation was carried out; while cracks preventing the high reversibility of write/erase cycles were generated for the GeTe film, the cracks were not recognized for the Te0.8(Ga0.05Se0.95)0.2+5 wt%Ge film.