Radiation damage in silicon and germanium
- 1 January 1970
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (1) , 3-10
- https://doi.org/10.1080/00337577008235039
Abstract
(1970). Radiation damage in silicon and germanium. Radiation Effects: Vol. 6, No. 1, pp. 3-10.Keywords
This publication has 52 references indexed in Scilit:
- Annealing of Defects Produced in-Type Ge by Electron Irradiation at 30°KPhysical Review B, 1969
- Bombardment-Produced Defects in-Type Germanium at Low TemperaturesPhysical Review B, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Observation of Irradiation-Induced Interstitial Copper Impurity in GermaniumJournal of Applied Physics, 1967
- Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High-Energy NeutronsJournal of Applied Physics, 1967
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy PairPhysical Review B, 1967
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Temperature-Dependent Defect Production in Bombardment of SemiconductorsPhysical Review B, 1959
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959
- Alpha-Particle Irradiation of Ge at 4.2°KPhysical Review B, 1958