Application of the Two-Way Balanced Amplifier Concept to Wide-Band Power Amplification Using GaAs MESFET's
- 1 March 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 28 (3) , 172-179
- https://doi.org/10.1109/tmtt.1980.1130037
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A 10 Watt Broadband FET Combiner/AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Intermodulation Distortion in Microwave MESFET AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A Technique for Predicting Large-Signal Performance of a GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1978
- A 12-18 GHz medium-power GaAs MESFET amplifierIEEE Journal of Solid-State Circuits, 1978
- Microwave Power GaAs FET AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1976
- Wide-Band Gallium Arsenide Power MESFET AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1976
- Broad-Band Medium-Power Amplification in the 2-12.4-GHz Range with GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1976
- InP Schottky-gate field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Equivalent Circuit of the Schottky-Barrier Field-Effect Transistor at Microwave Frequencies (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1975
- Voltage-current characteristics of GaAs J-FET's in the hot electron rangeSolid-State Electronics, 1970