Toward an analytical solution of the hydrogenated amorphous silicon p-i-n structure: Hyperbolic approximation of nonuniform electric field

Publisher Website
Google Scholar
Abstract
An approximated expression of the electric field spatial dependence in the intrinsic region of amorphous silicon p‐i‐n solar cells has been introduced, leading to analytical solutions for carrier distributions in the family of Bessel functions. Autoconsistent determination of the parameters involved in the field expression is discussed, on the basis of physical considerations, minimizing the error related to the hyperbolic approximation. A new analytical transport model for the p‐i‐n device is adopted in the solution: in this model the continuity equation is solved for both the majority and minority carrier in the whole structure, and photogeneration is introduced in the equations as an analytical, nonhomogeneous term. Rigorous boundaries conditions on carriers and currents at the interfaces can thus be imposed.