All Solid-State Low-Noise Receivers for 210-240 GHz
- 1 August 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (8) , 1247-1252
- https://doi.org/10.1109/tmtt.1982.1131231
Abstract
Low-noise all solid-state receiver systems for room temperature and cryogenic operation between 210 and 240 GHz are described. The receivers incorporate a single-ended fixed tuned Schottky barrier diode mixer, a frequency-tripled Gunn source as local oscillator and a GaAsFET IF amplifier. Single sideband receiver noise temperatures are typically 1300 K (7.39-dB noise figure) for a room temperature system and 470 K (4.18-dB noise figure) for a cryogenically cooled receiver operating at 20 K.Keywords
This publication has 8 references indexed in Scilit:
- Ultra-Low-Noise 1.2- to 1.7-GHz Cooled GaAsFET AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1982
- Millimeter Wavelength Frequency MultipliersIEEE Transactions on Microwave Theory and Techniques, 1981
- A 200-350-GHz Heterodyne ReceiverIEEE Transactions on Microwave Theory and Techniques, 1981
- Low noise single-ended mixer for 230 GHzElectronics Letters, 1981
- The Low-Noise 115-GHz Receiver on the Columbia-GISS 4-ft Radio TelescopeIEEE Transactions on Microwave Theory and Techniques, 1979
- A New Mixer Design for 140-220 GHz (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1977
- A 230-GHz Radiometer System Employing a Second-Harmonic Mixer (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1976
- Polarised interferometric spectrometry for the millimetre and submillimetre spectrumInfrared Physics, 1970