Ultra-Low-Noise 1.2- to 1.7-GHz Cooled GaAsFET Amplifiers
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (6) , 849-853
- https://doi.org/10.1109/tmtt.1982.1131159
Abstract
A 3-stage GaAsFET amplifier operating at 13 K, utilizing source inductance feedback is described. The amplifier has a noise temperature of 15 dB over the 1.2- to 1.7-GHz frequency range.Keywords
This publication has 2 references indexed in Scilit:
- Feedback Effects on the Noise Performance of GaAs MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Low-Noise Cooled GASFET AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1980