Electrical Switching and Memory Phenomena in Electrodeposited [TBA]x[Ni(DMID)2] Thin Films

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Abstract
This paper reports reproducible bistable electrical switching and memory phenomena observed in a lamellar structure with an amorphous film of [TBA]x[Ni(DMID)2] between Pt and Al electrodes where the [TBA]x[Ni(DMID)2] is electrically deposited on a Pt substrate with galvanostatic conditions (TBA = tetrabutylammonium, DMID = 1,3-dithiole-2-one-4,5-dithiolate).The switching effect is insensitive to air, moisture, light, and the polarity of the applied potentials. The device is stable over a long period of time and has a lifetime of roughly 20 switching cycles. The current-voltage characteristics reveal an abrupt increase in impedance from 300Ω to about 100 kΩ at a field strength of about 2400 V/cm for a 10 μm film sample. Switching with high-power dissipation yields a high-impedance memory state which can be erased by the application of high voltage in either direction. The character of the switching from a low to a high impedance state in this organic charge transfer complex is in contrast to the organic charge transfer complexes of M-TCNQ type (TCNQ = tetracyanoquinodimethane). An interpretation of this behavior is presented.