The lumped-charge power MOSFET model, including parameter extraction
- 1 May 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 10 (3) , 379-387
- https://doi.org/10.1109/63.388005
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- An accurate model for power DMOSFETs including interelectrode capacitancesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A simple diode model with reverse recoveryIEEE Transactions on Power Electronics, 1991
- Experimental characterization of power VDMOS transistors in commutation and a derived model for computer-aided designIEEE Transactions on Power Electronics, 1989