Vaporization of Ion-Implanted GaAs

This publication has 9 references indexed in Scilit:

• Influence of implantation temperature and surface protection on tellurium implantation in GaAs
  Applied Physics Letters, 1972
• Electron paramagnetic resonance of the lattice damage in oxygen-implanted silicon
  Journal of Applied Physics, 1972
• Studies of the Vaporization Mechanism of Gallium Arsenide Single Crystals
  The Journal of Chemical Physics, 1971
• Arsenic and Cadmium Implantations into n-Type Gallium Arsenide
  Journal of Applied Physics, 1971
• OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
  Applied Physics Letters, 1970
• Anneal behavior of defects in lon-lmplanted GaAs diodes
  Metallurgical Transactions, 1970
• Mass Spectrometric Study of the GaAs System
  The Journal of Chemical Physics, 1970
• Electron microscope investigation of damage structure in gallium-arsenide bombarded with neon ions
  Radiation Effects, 1969
• Vapor pressures and phase equilibria in the GaAs system
  Journal of Physics and Chemistry of Solids, 1967