On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
- 1 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 329-332
- https://doi.org/10.1016/s0167-9317(97)00075-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Mechanism for stress-induced leakage currents in thin silicon dioxide filmsJournal of Applied Physics, 1995
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- On the breakdown statistics of very thin SiO2 filmsThin Solid Films, 1990