GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3A) , L401
- https://doi.org/10.1143/jjap.29.l401
Abstract
GaInAs/InP photodiodes were fabricated by selective zinc diffusion using dimethylzinc as a zinc source to form the p+-region and selective p+-GaInAs growth to produce good ohmic contacts using low-pressure MOVPE. These photodiodes have an external quantum efficiency of 60–80% in the 0.95–1.55 µm-wave-length range, and a dark current of about 30 pA at -2 V and a -3 dB cutoff frequency of 1.4 GHz at 0 V were measured for 110 µm-diam diodes. These results show that this diffusion method is a useful process for fabricating photodiodes or other optical devices.Keywords
This publication has 10 references indexed in Scilit:
- A low dark current InGaAs/InP p-i-n photodiode with covered mesa structureIEEE Transactions on Electron Devices, 1987
- Optical parameters of InP-based waveguidesSolid-State Electronics, 1987
- Reach-through type planar InGaAs/InP avalanche photodiode fabricated by continuous vapor phase epitaxyIEEE Journal of Quantum Electronics, 1984
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Performance of InxGa1-xAsyP1-yphotodiodes with dark current limited by diffusion, generation recombination, and tunnelingIEEE Journal of Quantum Electronics, 1981
- Electroreflectance study of InGaAsP quaternary alloys lattice matched to InPIEEE Journal of Quantum Electronics, 1981
- Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche PhotodiodeJapanese Journal of Applied Physics, 1980
- Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiverElectronics Letters, 1980
- Interfacial recombination at (AlGa)As/GaAs heterojunction structuresJournal of Applied Physics, 1976
- The frequency response of avalanching photodiodesIEEE Transactions on Electron Devices, 1966