Doping of GaAs and InP in MOMBE using DEZn, TESn and DETe
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 1043-1044
- https://doi.org/10.1016/0022-0248(91)90602-2
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Gaseous dopant sources in MOMBE/CBEJournal of Crystal Growth, 1990
- Sn Incorporation in GaAs by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978