Gaseous dopant sources in MOMBE/CBE
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 383-392
- https://doi.org/10.1016/0022-0248(90)90390-7
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxyJournal of Crystal Growth, 1990
- Gas phase and surface reactions in Si doping of GaAs by silanesJournal of Crystal Growth, 1988
- Silicon doping using disilane in low-pressure OMVPE of GaAsJournal of Crystal Growth, 1987
- Doping of GaAs in metalorganic MBE using gaseous sourcesJournal of Crystal Growth, 1987
- Very low current threshold GaAs/Al0.5Ga0.5As double-heterostructure lasers grown by chemical beam epitaxyApplied Physics Letters, 1986
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compoundsJournal of Applied Physics, 1982
- Improved molecular-beam epitaxial GaAs power FET’sJournal of Applied Physics, 1980