Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compounds
- 1 June 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6) , 4230-4235
- https://doi.org/10.1063/1.331248
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1981
- Improved molecular-beam epitaxial GaAs power FET’sJournal of Applied Physics, 1980
- Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAsElectronics Letters, 1980
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977
- Invited: Growth and Doping Kinetics in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Ionized Zn doping of GaAs molecular beam epitaxial filmsApplied Physics Letters, 1975
- Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1975
- Strongly quenched deformation potentials of the Mn acceptor in GaAsPhysical Review B, 1974
- Magnesium-doped GaAs and Alx Ga1−x As by molecular beam epitaxyJournal of Applied Physics, 1972