Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxy
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 371-374
- https://doi.org/10.1016/0022-0248(90)90388-2
Abstract
No abstract availableKeywords
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- Tin phosphide as a phosphorus beam source for molecular beam epitaxyApplied Physics Letters, 1984